Typical Electrical And Thermal Characteristics
5
150
4
I D = 0.5A
V DS = 5V
10V
100
15V
50
C iss
3
C oss
2
20
f = 1 MHz
1
10
V GS = 0V
C rss
0
0
0.4
0.8
1.2
1.6
2
5
0.1
0.5
1
2
5
10
25
Q g , GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
5
5
Figure 8. Capacitance Characteristics .
LIM
N)
(O
RD
1m 0 s
10
10
s
0m
1
0.3
0.1
S
IT
V GS = 4.5V
DC
1s
10
m
s
s
μ
4
3
2
SINGLE PULSE
R θ JA =See note 1b
T A = 25°C
0.03
SINGLE PULSE
R θ JA = See note 1b
T A = 25°C
1
0.01
0.1
0.2
0.5
1
2
5
10
20
40
0
0.01
0.1
1
10
100
300
V DS , DRAI N-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
D = 0.5
R θ JA (t) = r(t) * R θ JA
0.2
0.1
0.2
0.1
P(pk)
R θ JA = See Note 1b
0.05
0.05
0.02
t 1
t 2
0.02
0.01
0.01
Single Pulse
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 / t 2
0.0001
0.001
0.01
0.1
1
10
100
300
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve .
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
FDC6303N Rev.C
相关PDF资料
FDC6304P MOSFET P-CH DUAL 25V SSOT-6
FDC6305N MOSFET N-CHAN DUAL 20V SSOT6
FDC6306P MOSFET P-CHAN DUAL 20V SSOT6
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